, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. features BTS140A telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 ? n channel ? enhancement mode ? temperature sensor with thyristor characteristic ? the drain pin is electrically shorted to the tab pin 1 g 2 d 3 s type bts 140 a \? 50v /d 42 a ^ds(on) 0.028 q package to-220ab maximum ratings parameter drain-source voltage drain-gate voltage, rqs = 20 ki gate-source voltage continuous drain current, rc = 65 c iso drain current rc = 85c,vgs = 10v,vos = 0.5v pulsed drain current, tc = 25 c short circuit current, 7] = - 55 ... + 1 50 c short circuit dissipation, 7] = - 55 ... + 1 50 c power dissipation operating and storage temperature range din humidity category, din 40 040 iec climatic category, din iec 68-1 thermal resistance chip-case chip-ambient symbol vds vdsr vgs /d awso a) puls /sc pscmax p? t\, ttfg - - ^thjc "thja values 50 50 20 42 13.5 168 80 1200 125 -55... + 150 e 55/150/56 51.0 <75 unit f\ a w c ? k/w vi .semi-c (inductors reserves the right in change test conditions, parameter limits and package dimensions without notice inf'ormution tunrnhcd by ni semi-cunducton it believed lo he both accurate ami reliable .11 the lime of going in press. however vi '{cini-cundiktiik .^mimics iiu responsibility fat iiny errors >>r mnivsiiins jiscuvvretj in iisiirie n.i senn-ci.iiiiliitti.rs < i['\< nn;ri; h> vci il\h n >l:itnshcels ire current hetbre plncinii nnlen
electrical characteristics at 7] = 25 c, unless otherwise specified. parameter symbol values min. typ. max. unit static characteristics drain-source breakdown voltage vgs = 0, 7d = 0.25 ma gate threshold voltage vqs = vds, id = 1 ma zero gate voltage drain current vgs = 0 v, vds = 50 v 7] = 25 c 7] = 125c gate-source leakage current vgs = 20v,vds = 0 7] = 25 c 7] = 150c drain-source on-state resistance vgs = 10v, /d=32a v(br)dss vos(th) 7oss iqss ^ds(on) 50 2.5 - - - - ? ? 3.0 0.1 10 10 2.0 0.024 ? 3.5 1.0 100 100 4.0 0.028 v ha na ha q dynamic characteristics forward transconductance vds > 2 x 7d x rds(on}max, 70 = 32 a input capacitance vgs = 0, vds = 25v,/=1mhz output capacitance vgs = 0, vds = 25v,/=1mhz reverse transfer capacitance vqs = 0, vds = 25v,/=1mhz turn-on time t^, (ton = ta(on) + tr) vcc = 25 v, vqs = 10 v, 7d = 3 a, rgs = 50 q turn-off time t?, (t* = rd(oh) + /,) vcc = 25 v, vqs = 10 v, 7d = 3 a, rqs = 50 ft ts c|8s ^om c^ ^d(on) t< fd(otf) '( 12 _ _ _ _ - - ? 26 1800 800 280 35 85 220 140 _ 2400 1200 450 50 130 280 180 s pf ns
electrical characteristics (cont'd) at 7] = 25 c, unless otherwise specified. parameter symbol min. values typ. max. unit reverse diode continuous source current pulsed source current diode forward on-voltage if = 84 a, vqs = 0 reverse recovery time i f = 7s, divdr = 100 a/jis, vr = 30 v reverse recovery charge lf = is, dip/df = 100 a/us, vr = 30 v /s *sm vsd tn qn - _ _ _ ? ? - 1.8 80 0.14 42 168 2.2 _ ? a v ns nc temperature sensor forward voltage /ts,on> = 10 ma, 7] = - 55 ... + 150 c sensor override, fp ^ 100 jxs 7; = -55... + 160c forward current 7; = -55... + 150c i sensor override, tp < 100 jis 7] = -55... -t-160c holding current, vts(ofl) = 5 v, 7] = 25 c rj = 150c switching temperature vts = 5v turn-off time vts = 5 v, /ts(on) = 2 ma vrs(on) a's(on) /h ^ts(on) ^ - - _ ? 0.05 0.05 150 0.5 1.4 ? _ ? 0.1 0.2 ? - 1.50 10 5 600 0.5 0.3 ? 2.5 v ma c us
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